| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2d825814c2847d297de844b4e7c60de4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-32 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-591
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-068 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-591 |
| filingDate |
2016-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7a3e22cd14b07a1df5a1f09b276269a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f74f2ceffec95630b24836d04be8914
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf52ef2fb7640bb851e5c4da6c32028e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e847df8861442903bc94b6bf48b2271d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_801e138a5a4fee63d35f995588e25962
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06bffc20662a743748b8eee08df7f25e |
| publicationDate |
2016-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20160041865-A |
| titleOfInvention |
Manufacturing Method of Sintered Reaction Bonded Silicon Nitride With High Thermal Conductivity |
| abstract |
There is provided a method of manufacturing a reaction sintered silicon nitride sintered body having a high thermal conductivity suitable for use in a heat dissipation structure such as a power device. The present invention relates to a method of manufacturing a silicon carbide powder, comprising: milling a raw material powder containing Si powder to a size of 1 micron or less; Mixing and molding the milled Si powder and sintering aids; Nitriding the formed body at 1350 to 1450 ° C to form reaction bonded silicon nitride in the formed body; And sintering the reaction-bonded silicon nitride at a temperature of 1850 ° C or higher to produce a reaction sintered silicon nitride sintered body. According to the present invention, it becomes possible to provide a reaction sintered silicon nitride sintered body having a high thermal conductivity. |
| priorityDate |
2016-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |