http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160041630-A

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filingDate 2014-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd0028217f287992f0c232b64a9f1575
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publicationDate 2016-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20160041630-A
titleOfInvention Silicon oxycarbide ceramics having high electrical conductivity, compositions thereof and Process for producing the Same
abstract The present invention relates to a bulk silicon oxycarbide material having high electrical conductivity, a composition for the production of a high conductivity bulk silicon oxycarbide material and a method for producing the same, and more particularly, to a compact silicon oxide material having a high electrical conductivity Conductive bulk silicon oxycarbide material; A composition for preparing an electrically conductive bulk silicon oxycarbide material, the composition comprising a polysiloxane as an essential main ingredient and at least one material selected from barium oxide (BaO) as a necessary additive or a precursor which forms barium oxide by heating; a) preparing a mixture by mixing in a polysiloxane soluble solvent at least one of a polysiloxane and barium oxide and a precursor that forms barium oxide by heating; b) curing the polysiloxane of the mixture, c) pyrolyzing the polysiloxane-cured mixture; d) pulverizing said pyrolyzed mixture; and e) pressing and sintering the pulverized mixture. The present invention also provides a method of manufacturing a high-conductivity conductive silicon oxycarbide material. By silicon oxycarbide material produced by the present invention is added to the material and the polysiloxane of at least one member from the precursor to generate a barium oxide by barium oxide and heating at the same time: (1) barium oxide is silicon dioxide, silicon oxycarbide (SiO 2 ) is precipitated as component reacts with the barium silicate (BaSiO 3), (2) residual carbon (C) loss in the silicon oxycarbide generated because the silicon dioxide component is precipitated with graphene (graphene) in the silicon oxycarbide , The volume resistivity of silicon oxycarbide is reduced to the range of 4 × 10 -2 to 1.25 × 10 -1 Ωcm, that is, the electric conductivity is very excellent in the range of 8 to 25 S / cm, (Various rings, boats, electrostatic chucks, dummy wafers), cathode materials for lithium batteries, LED-based phosphors, heat exchangers , It is possible to broadly as including electrical components such as motor and sensor applications.
priorityDate 2014-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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