http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160040433-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2251 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2257 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2015-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_def1e66f171cfd7af0ff3e3817c4e5da |
| publicationDate | 2016-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20160040433-A |
| titleOfInvention | Method of producing semiconductor substrate |
| abstract | [PROBLEMS] Even when a semiconductor substrate having a three-dimensional structure having minute pores on a nanometer scale is used, it is possible to use a semiconductor substrate including a whole surface of the inner surface of minute voids, Provided is a method for manufacturing a semiconductor substrate which is capable of diffusing an impurity diffusion component in a good and uniform manner while suppressing the occurrence of defects in the semiconductor substrate. (Solution) A diffusion agent composition containing an impurity diffusion component (A) and a Si compound (B) capable of generating a silanol group by hydrolysis is used to coat a semiconductor substrate surface with a film thickness of 30 nm or less By forming the film, the impurity diffusion component is uniformly diffused from the coating film to the semiconductor substrate. |
| priorityDate | 2014-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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