| abstract |
The present invention relates to electrically active devices (e.g., capacitors, transistors, diodes, floating gate memory cells, and the like) having dielectric, conductor and / or semiconductor layers with a smooth and / or dome- To a method of forming such devices by depositing or printing (e.g., inkjet printing) an ink composition comprising a metal or dielectric precursor. The smooth and / or dome-shaped profile allows a smooth topography change with no sharp steps, thereby preventing feature cracking during deposition and allowing more complete step coverage of subsequently deposited structures. The cross section of the present invention allows uniform growth of oxide layers by thermal oxidation and a substantially uniform etch rate of structures. These oxide layers can have a uniform thickness and can provide substantially complete coverage of the underlying electrically active features. A uniform etch allows an effective method of reducing the critical dimension of an electrically active structure by a simple isotropic etch. |