| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9bceffddb90b9b3da8a772212961764b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_48ccd54a3001e53e9982db9a50929af0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-61
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-62 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-956
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B31-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00 |
| filingDate |
2013-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57d8846cc192e909906e74abe6f6dff9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_336d1043103588926ea4e7e0cce530fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4689d9ab0593dc39f904e8202d2f3a3a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f340edca507f7662dac9d68f5ea681a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_300f8b7c038891a9912445d88532a72b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b86619f46d22aaa1f383f31b87606350 |
| publicationDate |
2016-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20160036527-A |
| titleOfInvention |
Silicon carbide powder and method for producing silicon carbide single crystal |
| abstract |
The productivity of the silicon carbide single crystal can be improved because the sublimation speed is fast and the amount of remaining silicon carbide is small without sublimation when used as a raw material for the sublimation recrystallization method and furthermore the silicon carbide single crystal (for example, a single crystal wafer) Which is capable of increasing the size of the silicon carbide powder. A silicon carbide powder having a brain specific surface area of 250 to 1,000 cm 2 / g and a silicon carbide powder having a particle size of more than 0.70 mm and not more than 3.00 mm in a total amount of the silicon carbide powder of not less than 50% by volume. The silicon carbide single crystal 6 can be formed on the seed crystal 4 provided on the bottom portion of the lid 3 by heating and sublimating the silicon carbide powder 5 accommodated in the crucible 1. [ |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200112330-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102068933-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10822720-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11225730-B2 |
| priorityDate |
2013-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |