| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9019c0ce5cb7b82c85e121f6cac86dce |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-352
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-083 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02112
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16 |
| filingDate |
2014-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7766ef506de5b499f522e53f10ff72e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_224a8300976a82c910e1c24dabb9076a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee31167dc4d9d04ebc5fd24cecd68eaf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38673ae24165e78cad4f5537a904c822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b5475f0565724738b27601da65f1595 |
| publicationDate |
2016-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20160031529-A |
| titleOfInvention |
Semiconductor structure in which film including germanium oxide is provided on germanium layer, and method for manufacturing semiconductor structure |
| abstract |
The present invention provides a semiconductor device comprising a germanium layer 30 and a first insulating layer 32 formed on the germanium layer 30 and mainly containing a material having lower oxygen potential than germanium oxide and germanium oxide, 30 has a half-width of the height frequency within 1 mu m square of 0.7 nm or less. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200131419-A |
| priorityDate |
2013-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |