| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4d72711e97d894c55af805c9de2053ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c85d78c6a4459b5dbbc49c82a4c5c107 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2015-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16c561705f3173e056e128e4c7ae4cc3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6757ec75cda101f4198437435e36dde4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02d14b62ac054141de9f22c8d66654ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c2f0a5a69d45b2cde5aaf89f029df6f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2a98a6e2c381bfcfb04471a2958fb52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b29968109f06dbb74ee3d4f8c018078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e49430578bcd3fcc6b30622de34978f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_805c0a55cbcde845a8d5e634c9dcd143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a4b60d2983c462a80653997c5bc501e |
| publicationDate |
2016-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20160025464-A |
| titleOfInvention |
Multiple-pattern forming methods |
| abstract |
A method of forming multiple patterns is provided. The method includes the steps of: (a) providing a semiconductor substrate comprising at least one layer to be patterned; (b) a matrix polymer comprising an acid labile group; Photoacid generators; Forming a photoresist layer formed from a composition comprising a solvent on at least one layer to be patterned; (c) pattern-exposing the photoresist layer to an activating radiation; (d) baking the exposed photoresist layer; (e) contacting the baked photoresist layer with a first developer to form a first resist pattern; (f) treating the first resist pattern with a coating composition comprising means for changing the solubility of the sidewall region of the first resist pattern from soluble to insoluble for a second developer different from the first developer; And (g) contacting the treated first resist pattern with a second developer to remove a portion of the first resist pattern to leave a solubility-modified sidewall region to form a multi-pattern. The method has particular applicability in the semiconductor manufacturing industry for the formation of microlithographic patterns. |
| priorityDate |
2014-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |