| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2014-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7eb89ff17de37bb423db3fd22d9b54a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fc462d61ea464606fd09c8a470918cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51a03747afdb06269ba0498ee44aef0e |
| publicationDate |
2016-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20160011301-A |
| titleOfInvention |
Method of fabricating semiconductor devices |
| abstract |
One embodiment of the present invention is directed to a method of manufacturing a semiconductor device, comprising: forming a gate electrode structure on an active region of a semiconductor substrate; forming recesses in regions of the active region that are located on both sides of the gate electrode structure; Implanting a source electrode structure and a drain electrode structure into the epitaxial layer for the source and the drain; forming a source electrode structure and a drain electrode structure on the epitaxial layer for the source and drain, respectively; And a method of manufacturing a semiconductor device. Separately or in parallel with the post-recess plasma treatment, the etched surface may be treated with a plasma prior to regrowth after the etch process to form the contact holes. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11784255-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10672764-B2 |
| priorityDate |
2014-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |