| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0272 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2015-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce9859ae1c6cc8574a2f4b767f14b8f8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf9e3079c7276af8e307a8a7299aa0d9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcd79d955774624a15dd5459e5de68aa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69ff4355441743ba0ea68147764f271c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29f09f06bb72bc1bfb79d749129a26e0 |
| publicationDate |
2016-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20160011160-A |
| titleOfInvention |
Enhancement of modulus and hardness for uv-cured ultra low-k dielectric films |
| abstract |
The embodiments described herein generally relate to methods for processing dielectric films on a substrate using uv energy. In one embodiment, a precursor film is deposited on a substrate, and the precursor film comprises a plurality of porogen molecules. The precursor film is first exposed to uv energy at a first temperature to initiate a crosslinking process. After a first predetermined time, the temperature of the precursor film is increased to a second temperature for a second predetermined time to remove the porogen molecules and continue the crosslinking process. The resulting film is a porous low-k dielectric film with improved modulus of elasticity and hardness. |
| priorityDate |
2014-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |