| abstract |
Embodiments disclosed herein generally include methods for forming porous low k dielectric films. In one embodiment, a method of forming a porous low k dielectric film on a substrate using pecvd in a processing chamber and in situ radical curing is disclosed. The method includes introducing radicals into the processing region of the processing chamber, introducing a gas mixture into the processing region of the processing chamber, forming a plasma in the processing region, and depositing a porous low k dielectric film on the substrate . |