http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160009552-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdf3b6ced3d7710ec0bc0addb67a1cc9 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13069 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate | 2014-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fee3ecddb8fbf6311118bd63b1a60f08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6efbad80ac90209985a51cfcea2bef8c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_949501fab1aab8582f126f6a2d4786ac |
| publicationDate | 2016-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20160009552-A |
| titleOfInvention | Semiconductor device |
| abstract | A semiconductor device including an oxide semiconductor and having a reduced size while maintaining good electrical characteristics is provided. In the semiconductor device, the oxide semiconductor layer is surrounded by an insulating layer including an aluminum oxide film containing excess oxygen. The excess oxygen of the aluminum oxide film is supplied to the oxide semiconductor layer including the channel by the heat treatment in the manufacturing process of the semiconductor device. Further, the aluminum oxide film forms a barrier against oxygen and hydrogen. This suppresses the release of oxygen from the oxide semiconductor layer surrounded by the insulating layer including the aluminum oxide film and the incorporation of impurities such as hydrogen into the oxide semiconductor layer, and as a result, the oxide semiconductor layer can be highly vibrated. Further, the gate electrode layers above and below the oxide semiconductor layer effectively control the threshold voltage. |
| priorityDate | 2013-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 78.