| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41758
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66643
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 |
| filingDate |
2015-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_142e70865c26b0c4a255c4c3d856eab7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37d57bacc0f72fdfda8d08bd884c35c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db36391e5854e8a82269db7f62c71474
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d8df76981828f445274c29ec4665d5c |
| publicationDate |
2016-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20160008979-A |
| titleOfInvention |
Semiconductor device |
| abstract |
[Problem] The electromigration resistance of the electrode is high. [MEANS FOR SOLVING PROBLEMS] A drain electrode (DE) is partially formed on a side surface (DSF) of a drain pad (DP). In this case, the drain electrode DE is integral with the drain pad DP and extends in the first direction (y direction) from the side surface DSF in plan view. A recess DRE is located in a region overlapping with the drain electrode DE when seen in plan view. At least a part of the drain electrode DE is inserted into the recessed portion DRE. The side surface (the side surface RDS) of the concave portion DRE facing the drain pad DP deeply penetrates into the drain pad DP as viewed in the first direction (y direction). |
| priorityDate |
2014-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |