| abstract |
A semiconductor device includes a substrate including a circuit region and a jumper region, a first gate electrode provided in the jumper region of the substrate and extending in a first direction, a first source / drain region provided on both sides of the first gate electrode, Drain regions, and a connection contact connecting the first gate electrode and the first source / drain regions. The connection contactnFirst sub-contacts disposed on both sides of the first gate electrode and connected to the first source / drain regions, and second sub-contacts extending in a second direction crossing the first direction in plan view, And a second sub contact connected to the contacts and in contact with the upper surface of the first gate electrode. From a plan viewpoint, each of the first sub-contacts has a first width along the first direction, and the second sub-contact has a second width along the first direction. And the second width is smaller than the first width. |