Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdf3b6ced3d7710ec0bc0addb67a1cc9 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-70 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1156 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate |
2014-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ec4a5f3b5b74f7867c60d9dc292aa58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f804000d767e858ac40266681d29806b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b3f3fccd5487ad6d0903a7bb7eea7d4 |
publicationDate |
2016-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20160003025-A |
titleOfInvention |
Semiconductor device and manufacturing method thereof |
abstract |
The present invention provides a transistor using an oxide semiconductor film with reduced oxygen defects. A semiconductor device having a high operating speed is provided. A highly reliable semiconductor device is provided. A semiconductor device having a fine structure is provided. The semiconductor device includes an oxide semiconductor film; A gate electrode overlapping the oxide semiconductor film; A gate insulating film between the oxide semiconductor film and the gate electrode; And a protective insulating film disposed above the oxide semiconductor film, the gate electrode, and the gate insulating film, and including a region containing phosphorus or boron. |
priorityDate |
2013-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |