| abstract |
A semiconductor device, a manufacturing method thereof, and an electronic device including a semiconductor device are disclosed. The disclosed semiconductor device may include first and second transistors, wherein the first transistor may comprise a first channel layer and a first ion gel, the second transistor may comprise a second channel layer and a second channel layer, And a second ionic gel. The first and second channel layers may comprise, for example, graphene. The first and second ionic gels may comprise different ionic liquids. The first and second ionic gels may comprise different cations and / or different anions. One of the first and second transistors may be p-type and the other may be n-type. The first and second transistors may constitute an inverter. |