| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5227534d5452763715e3b63f856057cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9bb6edc6dbde32fef6abe8ea64614b12 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-486
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-486
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate |
2008-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6144d145a0bf3ebdccda4ab7e11bbeea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e17fa78743632333a6c81a4ddce5b7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a6a21d530e5c1833fb38867c1b40df2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e421333faa8f0c798c6f6bbd528ae9e1 |
| publicationDate |
2015-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20150139630-A |
| titleOfInvention |
Contact for a semiconductor light emitting device |
| abstract |
An AlGaInP light emitting device is formed as a thin flip chip device. The device includes a semiconductor structure including an AlGaInP light emitting layer 24 disposed between an n-type region 22 and a p-type region 26. Both n- and p-contacts 34, 32 electrically connected to the n- and p-type regions are formed on the same side of the semiconductor structure. The semiconductor structure is connected to the mount 40 via the contacts. The growth substrate is removed from the semiconductor structure and the thick transparent substrate is omitted so that the total thickness of the semiconductor layers in the device is less than 15 microns in some embodiments and less than 10 microns in some embodiments. The upper surface of the semiconductor structure may be textured. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017183944-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109075221-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109075221-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10615311-B2 |
| priorityDate |
2007-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |