http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150134950-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae372ddaa494f2face39592b0429cc16 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 |
| filingDate | 2014-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5b581231a40b7a41507ac6b15df2235 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be83b3c7c6b25cc195cabf60b134ac41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e61e424b412de5a8e83582e8a07f6b07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b99ba1293a2e5103bea067eb40310545 |
| publicationDate | 2015-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20150134950-A |
| titleOfInvention | Method of fabricating light emitting diode with high efficiency |
| abstract | A method of manufacturing a high-efficiency light emitting diode is provided. Forming a p-type gallium nitride layer having a plurality of holes on the active layer, forming a p-type gallium nitride layer on the side surface of the p-type gallium nitride layer, And forming a metal layer filling the inside of the hole in which the insulating region layer is formed, wherein the metal layer is in the form of a metal disk layer, or the metal disk layer and the magnetic layer are sequentially The light emitting diode may be formed in a stacked manner. Accordingly, the present invention provides a method of forming a p-type gallium nitride layer having a plurality of holes by forming an insulating region layer in the p-type gallium nitride layer, thereby suppressing the decrease in the thin film quality of the gallium nitride layer or the generation of leakage current . Further, by forming a metal disk layer inside the gallium nitride layer, internal quantum efficiency of the light emitting diode can be effectively increased through surface plasmon resonance. In addition, by forming a magnetic layer in the gallium nitride layer, it is possible to apply a non-uniform magnetic field in the light emitting diode, thereby increasing the light emitting recombination rate and improving the luminous efficiency. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023149433-A1 |
| priorityDate | 2014-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.