| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-09 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-16 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
| filingDate |
2014-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3511ea33ddc97c74463fed0e3af42604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b36ce427d74f920b6e6a3cdd1501031
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_733e66d605989f45e81780ebb0eb4712
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8930302e4791a5e9bcf5c1fc148b34d7 |
| publicationDate |
2015-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20150133550-A |
| titleOfInvention |
Method of forming patterns and method of manufacturing integrated circuit device using the same |
| abstract |
There is provided a pattern formation method using an organic anti-reflection film comprising a polymer having an acid-decomposable group. A photoresist film is formed on the organic antireflection film. A first region selected from the photoresist film is exposed to generate an acid in the first region. An acid is used to increase the hydrophilicity of the first surface facing the first region of the organic anti-reflective film. The exposed photoresist film is developed to remove non-exposed areas in the photoresist film. The organic antireflection film and the corneal epithelium are anisotropically etched using the first region of the photoresist film as an etching mask. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170133150-A |
| priorityDate |
2014-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |