| abstract |
A field effect transistor having a gate insulating layer, a gate electrode, a semiconductor layer, a source electrode, and a drain electrode, wherein the gate insulating layer comprises an organic compound containing a bond of silicon and carbon, Wherein the metal atom is contained in an amount of 10 to 180 parts by weight based on 100 parts by weight of the total of carbon atoms and silicon atoms in the gate insulating layer. A low threshold voltage, and a leakage current is suppressed. |