| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4d72711e97d894c55af805c9de2053ab |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 |
| filingDate |
2012-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e928646c076bba9097fd581c44cad58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3f0aba3c95fccd4da7e13b82d4173a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2345ee5b84a9cad8145841edd393e088 |
| publicationDate |
2015-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20150127804-A |
| titleOfInvention |
Plating of copper on semiconductors |
| abstract |
A monovalent copper plating bath is used to metallize the current track on the front or emitter side of the semiconductor wafer. Copper is selectively deposited on the current track by electrolytic plating or LIP. A conventional metal plating bath can be used to perform additional metallization of the current track. Metallized semiconductors can be used in the manufacture of photovoltaic devices. |
| priorityDate |
2011-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |