| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 |
| filingDate |
2014-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24fc1b958be16a1abc66d8bdf424bf85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0ba7b215ff6ec205b4a61d9c5a69209 |
| publicationDate |
2015-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20150126899-A |
| titleOfInvention |
Pattern forming method, electronic device and method for manufacturing same |
| abstract |
The present invention relates to a pattern forming method in which collapse or peeling of a pattern is suppressed even when a fine and high aspect ratio pattern is formed, an electronic device manufacturing method including the pattern forming method, and an electronic device A device is provided. A pattern forming method of the present invention is a pattern forming method comprising the steps of forming an adhesion assisting layer having a polymerizable group on a substrate and forming an adhesion assisting layer having a transmittance of light having a wavelength of 193 nm of 80% or more on the substrate; A resist film forming step of applying a composition to form a resist film, an exposure step of exposing the resist film, and a developing step of developing the exposed resist film to form a pattern. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180095374-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11693321-B2 |
| priorityDate |
2013-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |