| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b9daca98ac07d1c93234d13f7306addb |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F17-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-00 |
| filingDate |
2014-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df383871393a28def721c36e2938add0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_daf3c3c92e5d2de3ef7783f5d08f26a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_975787f67a8afca8eff961c565b80ced
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0875e4068bce34ddfb7fab5def3fc063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2348ec29240d3594496cbd70d3098a1a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e138bb85f887329b1887ffac3732624
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c454b3fddf42890d3fd63164c395c08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df05397483072e303034bfe007868393
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0be76b5d81410bd585fe3aa94b610173
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e78d692761aafc032df1701336fb3a82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d67c8f25cc52931e9f14ed9198cbdf9 |
| publicationDate |
2015-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20150124603-A |
| titleOfInvention |
A precursor for zirconium oxide thin film, method for manufacturing thereof and a preparation method of thin film |
| abstract |
The present invention provides a method for preparing a zirconium oxide thin film and a zirconium oxide thin film produced according to the method of the present invention. The zirconium oxide containing precursor for forming the zirconium oxide thin film of the present invention can be used for a wide process temperature, A zirconium oxide thin film having a high dielectric constant can be produced. |
| priorityDate |
2014-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |