http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150121684-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_109869d32514a18c1dfe6b294bef8a7e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B2204-02 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B31-0446 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B31-0461 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-04 |
| filingDate | 2015-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04becb6d41c9487b59cd126b62352d03 |
| publicationDate | 2015-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20150121684-A |
| titleOfInvention | graphene manufacturing method and graphene atomic layer etching of graphene manufacturing method and wafer combination method of graphene bendng transistor and graphene bendng transistor |
| abstract | The present invention provides a method for producing a low-temperature substrate direct-growing graphene which grows directly on a substrate at a low temperature. The present invention also provides a method for producing a single layer or multilayer graphene. In addition, the present invention provides a method for producing multi-layer graphenes that grow directly on a substrate. The present invention also provides a single layer graphene uniformly distributed over the carbon-soluble layer. The present invention also provides a method for producing single-layer graphene or multilayer graphene by irradiating an energy source after multi-layer graphen growth. The present invention also provides a method for producing graphene in which a graphene atom layer is etched. The present invention also relates to a method of: 1) a method of combining a graphene bending circuit wafer having a circuit connected to graphene and graphene and a face-to-face bonding method of a barrier adjusting circuit (CMOS wafer) for controlling a graphene bending circuit wafer; A graphene bending circuit wafer having a circuit connected to graphene and graphene, and a face-to-face bonding method of a barrier adjusting circuit and a CMOS wafer, and 3) a graphene bending circuit Face to face bonding method of a wafer and a CMOS wafer Thereafter, a manufacturing method of 1) to 3) consisting of a barrier adjusting circuit or a barrier adjusting circuit and a manufacturing method comprising a CMOS circuit and / or a device, a transistor, Thereby providing a graphene bending transistor. The present invention also relates to a method for producing a single-layer or multi-layer graphene, a graphene method for etching a graphene atom layer, a paste-to-face bonding method, And an electronic component including the graphene bending transistor or the graphene bending transistor. Also, according to the present invention, the standby power problem can be reduced to one or more of a Piezo material, a Piezo characteristic, or a Piezo characteristic by selecting one or more of a height of one or more Schottky barriers, a height of a Fermi level, A work function (work function) is selected by using at least one selected from graphen having at least one grains, magnetic grains, grains having electric charge, grains having electric charge, or grains having at least one selected from graphene, bending deformation, The present invention provides a graphene bending transistor having a processing speed that is 100 times higher than that of a conventional transistor. Also, according to the present invention, the standby power problem may be selected from one or more of a height of one or more Schottky barriers (Schottky Barrier), a height of a Fermi level (Fermi level), one or more of graphene bending deformation, The present invention provides a graphene bending transistor having a processing speed that is 100 times higher than that of a conventional transistor by adjusting one or more work functions. |
| priorityDate | 2015-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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