| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b3e3de86fb3a7d008414342c8035051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0282bd20806bde06c2774c594a4f623e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D3-38 |
| filingDate |
2014-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f7e18a800c4de3c0e86b2121fa490f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9ab87cf4028b33a968f7c258274addc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_460c0d90522ef7e22d29fcb9a2708cfb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09627242b4bc55cc42299b5916c541ae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_118e83421f30adb0f4b45a60ea86d7d1 |
| publicationDate |
2015-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20150119987-A |
| titleOfInvention |
Cu plating solution for filling through silicon via and method for filling through silicon via using the same |
| abstract |
The present invention relates to an electrolytic copper plating solution for TSV charging and a method for charging TSV using the electrolytic copper plating solution for TSV and a method for filling TSV with copper sulfate (CuSO 4 .5H 2 O), sulfuric acid (H 2 SO 4 ), hydrogen chloride The surface tension of the copper plating solution is reduced and the penetration of the plating solution into the via TSV is facilitated to fill the copper plating solution without voids such as voids in the via, A periodic pulse and a reverse pulse current to which a current interruption time is applied may be applied to a copper plating solution having a low surface tension so that voids such as voids are not generated in the via. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113046799-A |
| priorityDate |
2014-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |