| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10 |
| filingDate |
2014-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5508bc045005c273517f213458733552
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_190bfff04b96485ca215ffe99088f99a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6385721ca94b4a2d858fa6636ddb8c2c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_304e52717c16cbb05a9373b388c244d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1d64ac16764c4394ddc17dba2422553 |
| publicationDate |
2015-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20150115261-A |
| titleOfInvention |
Light emitting device and lighting device having thereof |
| abstract |
The light emitting device disclosed in the embodiment includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer below the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer 1 active layer, wherein the nitride based light emitting structure layer; A first electrode electrically connected to the first conductive semiconductor layer; A contact layer of a conductive material in contact with the second conductive semiconductor layer; A reflective layer disposed below the contact layer; A capping layer disposed below the reflective layer; And a conductive support member disposed under the capping layer, wherein the reflective layer is thicker than the thickness of the second conductivity type semiconductor layer and includes a thickness greater than 90 times the thickness of the contact layer. |
| priorityDate |
2014-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |