http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150113116-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b55c349b43c3ecba4977fd52cc8f8c67 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B2307-416 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B17-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B5-282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B5-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3464 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B5-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 |
| filingDate | 2014-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e27b43de747078a7efcbe2320b5ddfe0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c57a0cbdd4533d70bf7c851653b0a04 |
| publicationDate | 2015-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20150113116-A |
| titleOfInvention | Method for producing infrared radiation reflecting film |
| abstract | A method of manufacturing an infrared ray reflective film according to the present invention comprises: a metal layer forming step of forming a metal layer (25) on a transparent film base (10); A metal oxide layer forming step in which the front surface side metal oxide layer 22 is formed by direct current sputtering so as to directly contact the metal layer 25; And a transparent protective layer (30) are formed on the front surface-side metal oxide layer (22) in this order. In the metal oxide layer forming step, the sputter target used in the direct current sputtering method is preferably a target containing a zinc atom and a tin atom, and a target in which a metal oxide and at least one of zinc oxide and tin oxide are sintered with a metal powder. In the surface-side metal oxide forming step, an inert gas and oxygen gas are introduced into the sputtering film forming chamber. The oxygen concentration in the gas introduced into the sputtering film-forming chamber is preferably 8 vol% or less. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170112247-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019225874-A1 |
| priorityDate | 2013-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.