| abstract |
According to the present invention, there is provided a silicon etching solution for dissolving monocrystalline silicon in anisotropy, which comprises (1) potassium hydroxide or sodium hydroxide, (2) hydroxylamine, and (3) a thiourea group, (I), and a silicon etching method using the silicon etching solution. (In the general formula (I), Q represents an organic group having a saturated or unsaturated carbon-carbon bond.) By using the silicon etchant, the presence of copper and / or copper ions dissolved in the etchant exhibits a high etch rate without lowering the etch rate of silicon, and the stability of the etchant is not impaired. |