Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-89 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2006-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-72 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G15-006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
filingDate |
2015-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d0bf63f024929a0f7e925d4edfed33e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94be08b26f8d4214f1b952ccdf04b9f1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22242462834f6bc9bb269aa141ccc955 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f3edd808a38c8eb882cbbcb19bdd830 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9fa7a18d64804554d0e73091a08be533 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e9e91168d4739ff4d33862fe0025498 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b906246ac186fa4fdb0b671631283d57 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90a374176e49b6949d98fca23538a820 |
publicationDate |
2015-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20150099467-A |
titleOfInvention |
Semiconductor film, transistor, semiconductor device, display device, and electronic appliance |
abstract |
[PROBLEMS] To provide a semiconductor device with good electrical characteristics. Alternatively, a highly reliable semiconductor device is provided. When a plurality of electron diffraction patterns are observed by irradiating the surface of the oxide semiconductor film with the position of the electron beam while relatively moving the position of the oxide semiconductor film with respect to the surface to be formed of the oxide semiconductor film using an electron beam having a half width of 1 nm of the probe diameter , Wherein the plurality of electron diffraction patterns have at least 50 electron diffraction patterns observed at different positions and the sum of the ratio having the first electron diffraction pattern and the ratio having the second electron diffraction pattern is 100% Wherein the ratio of the first electron diffraction pattern having the first electron diffraction pattern is 90% or more, the first electron diffraction pattern has a point of view indicating that the c-axis is oriented in a direction substantially perpendicular to the surface to be formed of the oxide semiconductor film, Or an observation region arranged so as to form a circle. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10276594-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10134914-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11557612-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11482626-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220066434-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11437524-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11450691-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11552111-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11530134-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10796903-B2 |
priorityDate |
2014-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |