http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150095611-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_227e81672cfaf1f7fe36a72d5a8213e2 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-564 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23G5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23G5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2012-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e37b466064e5489a452521a2d4932d0d |
| publicationDate | 2015-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20150095611-A |
| titleOfInvention | Process and method for in-situ dry cleaning of thin film deposition reactors and thin film layers |
| abstract | The present invention relates to the use of thionyl chloride and related materials to dry-etch the inner surface of a metal organic vapor phase epitaxy (MOVPE) reactor to remove deposits. The method is also useful for dry etching of a process substrate in such a reactor for cleaning and processing the substrate. The present invention is particularly applicable to chemical vapor deposition reactors used in the manufacture of high brightness LEDs based on III-V semiconductors such as GaN and related materials. Process features include CO 2 , COBr 2 , COI 2 , SOI 2 formed from heat, UV and plasma activated dry scrubbing, and combinations of pure materials or constituent gases such as CO, SO, SO 2 or NO and halogens , Etchant gases such as SOCl 2 , SOBr 2 , SO 2 Cl 2 , SO 2 Br 2 , NOCl, NOBr, NOI, S 2 Cl 2 , S 2 Br 2 , SCl 2 , SBr 2 , SOClBr, SOClF and SOFBr So that the desired effect can be achieved. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11717866-B2 |
| priorityDate | 2012-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.