http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150095086-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c515136b556c70cd53fd21a9723abedb |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-16 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-16 |
filingDate | 2014-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b19b37843becb699ad883e6d1253e48d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c4604e56fc02ef6411cb5fa60f24a98 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5bc506702f651873333fc065bac5806 |
publicationDate | 2015-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20150095086-A |
titleOfInvention | Etching Solution Capable of Effectively Reducing Galvanic Effect |
abstract | The present invention relates to an etchant capable of effectively reducing the galvanic effect, and more particularly, to an etchant prepared by dissolving a 5-membered heterocyclic compound containing an etchant and nitrogen at a specified ratio in water, When the user conducts wet etching using the etching solution for a substrate comprising at least one first metal (e.g., gold) and at least one second metal (e.g. copper), the nitrogen containing 5-membered ring heterocycle The compound can form an organic protective film on the first metal having a relatively high reduction potential and further can prevent the second metal from being excessively etched due to the galvanic effect. |
priorityDate | 2014-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 82.