http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150091207-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45561 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4557 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32577 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2014-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c77499bb17a75c6266165e6de69f06b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c745cc5d8b5cba025d944e864981d9f4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f53fe5174bfc7beacd112c7ef202ac4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ace5e66a38b35b8135525e9108574d3a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd3c2e483cae05ec199c3f676daf62f0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf133a5d5829c70528974f99dfcb8f13 |
| publicationDate | 2015-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20150091207-A |
| titleOfInvention | Substrate processing apparatus and method of manufacturing semiconductor device |
| abstract | An object of the present invention is to make it possible to maintain a high operation efficiency even in an apparatus using a shower head. A first gas supply system connected to the source gas source and including a source gas supply line in which a source gas supply control unit is installed; A second gas supply system connected to the reaction gas source and including a reaction gas supply pipe in which a reaction gas supply control unit is installed; A third gas supply system connected to the cleaning gas source, the third gas supply system including a reactive gas supply pipe in which a cleaning gas supply control unit is installed; A showerhead including a buffer chamber to which the first gas supply system, the second gas supply system, and the third gas supply system are connected; A processing chamber provided below the shower head and accommodating a substrate mounting portion for mounting a substrate thereon; A plasma generation region switching unit for switching plasma generation of the buffer chamber and plasma generation of the processing chamber; A plasma generation unit including the plasma generation region switching unit and a power supply; And a control unit for controlling at least the source gas supply unit, the reaction gas supply control unit, and the plasma generation unit. |
| priorityDate | 2014-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.