http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150091003-A

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filingDate 2015-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75c6267d8c775da162e94c833c3742ac
publicationDate 2015-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20150091003-A
titleOfInvention Semiconductor device, electronic device, and manufacturing method of semiconductor device
abstract The present invention provides a semiconductor device suitable for miniaturization. A first transistor, a second transistor located on the first transistor, an insulating film located between the first transistor and the second transistor, a wiring located between the first transistor and the insulating film, and an electrode, Wherein a channel of the first transistor has a single crystal semiconductor, a channel of the second transistor has an oxide semiconductor, and the gate of the second transistor has a function of reducing the diffusion of water or hydrogen. The electrode includes the same material as the material of the electrode.
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priorityDate 2014-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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