| abstract |
The airtight barrier layer formation step includes sputtering a thin film from a sputtering target, wherein the sputtering target comprises a low Tg glass, a precursor of a low Tg glass, or a sputtering material such as an oxide of copper or tin. During sputtering, the formation of defects in the barrier layer is controlled within a narrow range, and the sputtering material is maintained at a temperature below 200 ° C. |