| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44ff3005508304394801e265e503b811 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2218-33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2217-281 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0641
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-3435
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03B20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-225 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03B20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C17-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C17-245 |
| filingDate |
2013-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e34c21a8861c45dbe7c96760158af6a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0f7279171ad82bd5bd536eec5c5f9ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d104fd2245bdf5654068f4517465a2f7 |
| publicationDate |
2015-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20150083879-A |
| titleOfInvention |
Process for producing mask blank and process for producing transfer mask |
| abstract |
The present invention provides a method of manufacturing a mask blank capable of reducing the internal stress of a thin film and a method of manufacturing a transfer mask. A method of manufacturing a mask blank according to the present invention includes the steps of preparing a transparent substrate having a main surface and a glass material having a hydrogen content of less than 7.4 x 10 18 molecules / A step of forming a thin film containing a material containing silicon or a metal on a surface thereof and a step of performing a heat treatment or a light irradiation treatment on the transparent substrate on which the thin film is formed. The amount of change in flatness in a predetermined region calculated on the basis of one main surface shape of the transparent substrate before forming the thin film and a difference shape obtained from one main surface shape of the transparent substrate exposed after removing the thin film , And the absolute value is 100 nm or less. |
| priorityDate |
2012-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |