| abstract |
An offset spacer film (OSS) is formed on the sidewall surfaces of the gate electrodes NLGE and PLGE in such a manner as to cover an area where the photodiode PD is disposed. Then, the extension regions LNLD and LPLD are formed using an offset spacer film or the like as an implantation mask. Then, a process for removing the offset spacer film covering the region where the photodiode is disposed is performed. Then, a sidewall insulation film SWI is formed on the side wall surface of the gate electrode. Then, source / drain regions HPDF, LPDF, HNDF, and LNDF are formed using a sidewall insulating film or the like as an implantation mask. |