| abstract |
The present invention is characterized in that the bonding strength between a heating element and a substrate is reduced due to stress caused by a difference in thermal expansion coefficient between a heating element and a substrate generated at the time of cooling after thermal curing of a film having a high thermal conductivity and in a thermal history after assembly, And to provide a highly reliable semiconductor device which solves the problem that the heat resistance of the film is not sufficient. A high heat conductive layer 4 for transferring heat from the heat generating element 2 to the heat receiver 3 is provided between the heat generating element 2 and the heat receiver 3 and between the heat emitting element 2 and the heat receiver 3 (A) at least two thermosetting resins including a polyether compound having, on both terminals, a phenyl group bonded with a vinyl group of at least a specific structure, (B) a thermoplastic resin Thermosetting inorganic filler, (C) a thermally conductive inorganic filler, (D) a hardener, and a thickness of 10 to 300 μm. |