http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150065743-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0604686868c6c95fcf9cb63ace6bcb3d |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02167 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| filingDate | 2013-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97bc957f1726cccb74688e0104b91b56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91d7c88a7ae1cc63574bfa3b937058c8 |
| publicationDate | 2015-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20150065743-A |
| titleOfInvention | Methods and structures for forming and protecting thin films on substrates |
| abstract | A method for forming a thin film on a substrate is disclosed. The method includes cleaning (402) a process chamber by flowing a first gas having fluorine. The method also includes coating (404) the process chamber with a first encapsulant layer comprising amorphous silicon (A-Si) by flowing a second gas for a first duration, wherein the first encapsulant layer is fluorine contaminated . The method further includes loading (406) a substrate into the process chamber (406), depositing a thin film on the substrate (408) by flowing a third gas into the process chamber, and unloading the substrate from the process chamber . The thin film may comprise silicon nitride (SiN), the first gas may comprise nitrogen trifluoride (NF 3 ) gas, and the second gas may comprise silane (SiH 4 ) gas. The thin film may be formed using plasma-enhanced chemical vapor deposition. The substrate may be a solar cell or a liquid crystal display (LCD). |
| priorityDate | 2012-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.