http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150065284-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21Y2115-10 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21K9-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04 |
| filingDate | 2013-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d49e009a8b622359583f2b7bb856f4a0 |
| publicationDate | 2015-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20150065284-A |
| titleOfInvention | Light emitting device and lighting system |
| abstract | Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system. A light emitting device according to an embodiment includes a first conductive semiconductor layer; An In x Al y Ga 1 -x- y N / GaN layer (0 <x <1, 0 <y <1) (17) is formed on the first conductive semiconductor layer 11; An active layer 12 on the In x Al y Ga 1 -x- y N / GaN layer 17; And a second conductivity type semiconductor layer 13 on the active layer 12. The active layer 12 includes an In p Ga 1 - p N well layer (where 0 <p <1) 12a and a GaN And a barrier layer 12b. |
| priorityDate | 2013-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.