| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8c22b88c8afe3710e362aa0e8fda120f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-131 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14632
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1463 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate |
2011-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3eb55bb07f5c808c2f7bd566e2cff93b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54f6002882fdfecbcc936cda181a9672
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20a4d998e16472f779c2e2bda75169d7 |
| publicationDate |
2015-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20150063164-A |
| titleOfInvention |
Image sensors employing sensitized semiconductor diodes |
| abstract |
In various exemplary embodiments, the claimed subject matter is a method of forming an image sensor and an image sensor. In one embodiment, the image sensor comprises a semiconductor substrate and a plurality of light emitting regions. Each pixel region comprises a photosensitive material on a substrate and the photosensitive material is positioned to receive light. A pixel circuit for each pixel region is also included in the sensor. Each pixel circuit includes a semiconductor substrate and a charge storage portion formed in the readout circuit. A non-metallic contact region is located between the photosensitive material and the charge storage portion of each pixel region, and the charge storage portion is in electrical communication with the photosensitive material of each pixel region through the non-metal contact region. |
| priorityDate |
2010-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |