| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10271 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0669
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7853
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7842 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2013-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19bb7d9a7e476cd710f34e7fdec643f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1d66c15e70a8100cad81c8a31dd80f5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e56ab8ea800b1096e58c0f4bcfd3341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b318ad0ed3e64045ab14fad49aec168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5443996ae8bd1eff1a8e426f0a034478 |
| publicationDate |
2015-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20150060935-A |
| titleOfInvention |
Conversion of thin transistor elements from silicon to silicon germanium |
| abstract |
Embodiments of the present disclosure provide techniques and configurations for converting thin film transistor elements from silicon (Si) to silicon germanium (SiGe). In one embodiment, a method includes providing a semiconductor substrate having a channel body of a transistor device disposed on a semiconductor substrate, the channel body including silicon, forming a cladding layer comprising germanium on the channel body And annealing the channel body to cause germanium to diffuse into the channel body. Other embodiments may be described and / or claimed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10868151-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180078143-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11476352-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180069698-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10935832-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10276691-B2 |
| priorityDate |
2012-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |