http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150060592-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a3bb4ae410da4be8184239adc5ab1c0 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate | 2014-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3762cae68b4af4cc0d27ee99aa40c9d5 |
| publicationDate | 2015-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20150060592-A |
| titleOfInvention | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
| abstract | A method of forming a film on a patterned surface of a substrate by an atomic layer deposition (ALD) process, comprising: adsorbing a first precursor containing intramolecular silicon or metal on the patterned surface; Adsorbing a second precursor that does not contain silicon or metal in the molecule on the first precursor adsorbed surface; Exposing a second precursor adsorbed surface to a reactant that has been excited to oxidize, nitrate, or carbonize the precursors adsorbed to the surface of the substrate; And repeating the above cycle to form a film on the patterned surface of the substrate. |
| priorityDate | 2013-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.