http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150056459-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-522 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate | 2014-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa54170f42e3bbb0dbe1c16c1d4a405b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13c4d5c6e4712b9426f4b45c352a7593 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_543d1538a8ce3bf1ed24b0d187bc27b1 |
| publicationDate | 2015-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20150056459-A |
| titleOfInvention | Inter-level connection for multi-layer structures |
| abstract | A system and method for fabricating a semiconductor device structure are provided. An exemplary semiconductor device structure includes a first device layer, a second device layer, and an interlevel connection structure. The first device layer comprises a first conductive layer, and a first dielectric layer formed on the first conductive layer, wherein the first device layer is formed on the substrate. The second device layer comprises a second conductive layer, and a second device layer is formed on the first device layer. The inter-level connection structure is configured to electrically connect the first conductive layer and the second conductive layer and includes at least one conductive material, and the inter-level connection structure penetrates at least a portion of the first dielectric layer. The first conductive layer is configured to electrically connect to the first electrode structure of the first semiconductor device in the first device layer. |
| priorityDate | 2013-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426099678 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6337007 |
Total number of triples: 23.