Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28008 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
filingDate |
2010-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfdc2523237cb8b323317ebc308dbfe5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eee9961b51571967dc67c5e29fc67329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94be08b26f8d4214f1b952ccdf04b9f1 |
publicationDate |
2015-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20150053818-A |
titleOfInvention |
Method for manufacturing semiconductor device |
abstract |
A method of manufacturing a thin film transistor having an oxide semiconductor layer as a channel forming region is disclosed. The present invention provides a method of manufacturing a semiconductor device, comprising: forming an oxide semiconductor layer on a gate insulating layer; Forming a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer on the oxide semiconductor layer so that at least a part of the oxide semiconductor layer is exposed; And forming an oxide insulating layer on the oxide semiconductor layer in contact with the oxide semiconductor layer. The exposed region of the oxide semiconductor layer may be exposed to a gas containing oxygen in the presence of plasma before formation of the oxide insulating film. By this method, oxygen diffuses into the oxide semiconductor layer, contributing to excellent thin film transistor characteristics. |
priorityDate |
2009-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |