| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 |
| filingDate |
2013-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2015-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20150046450-A |
| titleOfInvention |
Semiconductor buffer structure, semiconductor device employing the same and method of manufacturing semiconductor device using the semiconductor buffer structure |
| abstract |
The disclosed semiconductor buffer structure includes a silicon substrate; A nucleation layer formed on the silicon substrate; (0? X <1, 0? Y <1, 0? Z <1, 0? X + y + z? 1) formed on the nucleation layer and having a constant composition ratio, B x Al y In z Ga 1-xyz N A second layer formed of the same material as the nucleation layer and a third layer made of the same material and composition as the first layer on the first layer, And a buffer layer. |
| priorityDate |
2013-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |