| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2013-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2015-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20150046136-A |
| titleOfInvention |
Method for etching semiconductor substrate and method for manufacturing semiconductor device |
| abstract |
A substrate having a first layer containing titanium nitride (TiN) and a second layer comprising a transition metal, wherein a substrate having a surface oxygen content of 0.1 to 10 mol% in the first layer is selected , An etching solution having a pH of 7 to 14 containing an ammonia compound and an oxidizing agent is brought into contact with the substrate to remove the first layer. |
| priorityDate |
2012-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |