http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150043971-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-0473 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-30472 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3171 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-08 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-317 |
| filingDate | 2014-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20150043971-A |
| titleOfInvention | Medium current ribbon beam for ion implantation |
| abstract | A method of setting up a medium current ribbon beam for ion implantation is provided. This includes providing an ion source to which the process gas and the auxiliary gas are supplied. The process ion beam is separated from the auxiliary gas with a mass analyzing magnet, and the intensity of the process ion beam is controlled by varying the ratio of process gas to auxiliary gas in the ion source gas supply. The process beam intensity may also be controlled with one or more mechanical current limiting devices located below the ion source. An ion beam system is also provided. The method can control the total ribbon beam intensity at the target between about 3 uA to about 3 mA. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180025972-A |
| priorityDate | 2013-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23969 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419548998 |
Total number of triples: 16.