| abstract |
The present invention relates to a sputtering target or a tablet for ion plating capable of realizing high-speed film formation and nodule-less, an oxide sintered object most suitable for obtaining the oxide sintered object and a method for producing the oxide sintered object, a low resistance To a transparent conductive film. Accordingly, the present invention may contain indium and gallium in the form of oxide, of Biggs byte structure In 2 O 3 phase to form a main crystal phase, β-Ga 2 O of the 3-like structure GaInO 3 phase, or GaInO 3 phase ( Ga, In) 2 O 3 phase is finely dispersed in the form of In 2 O 3 with a grain size of 5 μm or less and the content of gallium is 10 atomic% to 35 atomic ratio of Ga / (In + Ga) % Of the oxide sintered body. |