http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150037896-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-86 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78657 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-86 |
| filingDate | 2013-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20150037896-A |
| titleOfInvention | Method for producing sos substrates, and sos substrate |
| abstract | The SOS substrate having a small number of defects and having no unevenness can be manufactured with good reproducibility and the SOS substrate can be put into a semiconductor manufacturing line, that is, a method of manufacturing an SOS substrate by implanting ions from the surface of the silicon substrate 1, Implanted region of the silicon substrate 1 and the surface of the sapphire substrate 4 either directly or through the insulating film 2, To obtain an SOS substrate (8) having a silicon layer (6) on a sapphire substrate (4), characterized in that the sapphire substrate (4) has a C plane with an off angle of 1 deg. Or less . |
| priorityDate | 2012-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.