http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150037855-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02595 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-03 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-03 |
| filingDate | 2013-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20150037855-A |
| titleOfInvention | Method for producing polycrystalline silicon |
| abstract | A silicon deposition step of producing silicon by reaction of a chlorosilane compound with hydrogen, a conversion reaction step of bringing the exhaust gas discharged from the silicon deposition step into contact with activated carbon to remove hydrogen chloride in the exhaust gas, And a circulation step of supplying hydrogen obtained in the separation step to the silicon deposition step, the method comprising the steps of: (1) 2) of the polycrystalline silicon is satisfied; (1) bringing the gas after the telephone reaction obtained in the telephone reaction process into contact with an adsorbent containing a Lewis acidic compound before the separation step, and (2) introducing hydrogen obtained in the separation step into the Lewis acidic compound In contact with the adsorbent. |
| priorityDate | 2012-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.