http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150036815-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate | 2008-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20150036815-A |
| titleOfInvention | Method of forming silicon-containing films |
| abstract | Providing a substrate in a reaction chamber, injecting at least one silicon containing compound into the reaction chamber; Injecting one or more gaseous co-reactants into the reaction chamber; And reacting the substrate, the silicon-containing compound, and the gaseous reactant at a temperature of 550 DEG C or less to obtain a silicon-containing film deposited on the substrate. Introducing a silicon wafer into the reaction chamber; Introducing a silicon-containing compound into the reaction chamber; Purging the reaction chamber with an inert gas; And introducing a nitrogen-containing gaseous co-reactant under conditions suitable for forming a monolayer of a silicon nitride film on the silicon wafer. |
| priorityDate | 2007-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 64.